Semiconductor Doping

194 books
Minority-carrier lifetime in InP as a function of light biasUnknown Author

Minority-carrier lifetime in InP as a function of light bias

Unknown Author

1994No page data
Impurities in SemiconductorsVictor I. Fistul
⏱ 7h 28m

Impurities in Semiconductors

Victor I. Fistul

2004448 pp.
Silicon technologiesAnnie Baudrant
⏱ 6h 8m

Silicon technologies

Annie Baudrant

2011368 pp.
Semiconductor Defect Engineering--Materials, Synthetic Structures and DevicesS. Ashok
⏱ 10h 5m

Semiconductor Defect Engineering--Materials, Synthetic Structures and Devices

S. Ashok

2005605 pp.
Ion ImplantationHeiner Ryssel
⏱ 9h 16m

Ion Implantation

Heiner Ryssel

1983556 pp.
Ion implantation technology-92International Conference on Ion Implantation Technology (9th 1992 Gainesville, Fla.)
⏱ 11h 39m

Ion implantation technology-92

International Conference on Ion Implantation Technology (9th 1992 Gainesville, Fla.)

1993699 pp.
Ion implantation technologyInternational Conference on Ion Implantation Technology (16th 2006 Marseille, France)
⏱ 11h 4m

Ion implantation technology

International Conference on Ion Implantation Technology (16th 2006 Marseille, France)

2006664 pp.
Dopants and defects in semiconductorsMatthew D. McCluskey
⏱ 5h 50m

Dopants and defects in semiconductors

Matthew D. McCluskey

2011350 pp.
Properties of Doped Semiconducting MaterialsV. S. Zemskov
⏱ 6h 17m

Properties of Doped Semiconducting Materials

V. S. Zemskov

1992377 pp.
Rapid Thermal ProcessingRichard B. Fair
⏱ 7h 10m

Rapid Thermal Processing

Richard B. Fair

1993430 pp.
Properties of impurity states in superlattice semiconductorsNATO Advanced Research Workshop on the Properties of Impurity States in Superlattice Semiconductors (1987 University of Essex)
⏱ 5h 51m

Properties of impurity states in superlattice semiconductors

NATO Advanced Research Workshop on the Properties of Impurity States in Superlattice Semiconductors (1987 University of Essex)

1988351 pp.
Epitaksja MOVPE w technologii heterostruktur związków AIIIBVMarek Tłaczała
⏱ 3h 18m

Epitaksja MOVPE w technologii heterostruktur związków AIIIBV

Marek Tłaczała

2002198 pp.
Liquid-phase oxidation of unsaturated compoundsV. L. Rubaĭlo
⏱ 4h 53m

Liquid-phase oxidation of unsaturated compounds

V. L. Rubaĭlo

1993293 pp.
Doping and semiconductor junction formationMarshall Sittig
⏱ 5h 18m

Doping and semiconductor junction formation

Marshall Sittig

1970318 pp.
Zjawiska występujące w półprzewodnikach silnie domieszkowanych i ich wpływ na parametry przyrządów półprzewodnikowychWiesław Kuźmicz
⏱ 2h 0m

Zjawiska występujące w półprzewodnikach silnie domieszkowanych i ich wpływ na parametry przyrządów półprzewodnikowych

Wiesław Kuźmicz

1985120 pp.
Doping engineering for front-end processingB. J. Pawlak
⏱ 5h 28m

Doping engineering for front-end processing

B. J. Pawlak

2008328 pp.
Ion implantation technology--98International Conference on Ion Implantation Technology (12th 1998 Kyoto, Japan)
⏱ 11h 40m

Ion implantation technology--98

International Conference on Ion Implantation Technology (12th 1998 Kyoto, Japan)

1998700 pp.
Ion implantation technologyInternational Conference on Ion Implantation Technology (14th 2002 Taos, N.M.)
⏱ 13h 11m

Ion implantation technology

International Conference on Ion Implantation Technology (14th 2002 Taos, N.M.)

2001791 pp.
Design of shallow p-type dopants in ZnOSu-Huai Wei

Design of shallow p-type dopants in ZnO

Su-Huai Wei

2008No page data
Design of Shallow p-type Dopants in ZnO (Presentation)Su-Huai Wei
⏱ 32m

Design of Shallow p-type Dopants in ZnO (Presentation)

Su-Huai Wei

200832 pp.
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