Gallium Alloys

28 books
Metal-to-gallium arsenide contact evaluation using a VHF bridge techniqueG. A. Armantrout
⏱ 1h 21m

Metal-to-gallium arsenide contact evaluation using a VHF bridge technique

G. A. Armantrout

196581 pp.
GaN and related alloys--2002Christian Wetzel
⏱ 14h 22m

GaN and related alloys--2002

Christian Wetzel

2003862 pp.
A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphideGordon J Kuhlmann
⏱ 1h 19m

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

Gordon J Kuhlmann

197979 pp.
Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsPSadao Adachi
⏱ 5h 18m

Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP

Sadao Adachi

1992318 pp.
High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communicationsJ. C. Connolly
⏱ 1h 33m

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

J. C. Connolly

198993 pp.
GaN and related alloys, 1999Randall M. Feenstra
⏱ 17h 26m

GaN and related alloys, 1999

Randall M. Feenstra

20001046 pp.
Gan, Ain, Inn and Their AlloysChristian Wetzel
⏱ 13h 18m

Gan, Ain, Inn and Their Alloys

Christian Wetzel

2005798 pp.
Modelling directional solidificationWilliam R. Wilcox

Modelling directional solidification

William R. Wilcox

1987No page data
GaN and related alloys--2001Jörg Neugebauer
⏱ 14h 34m

GaN and related alloys--2001

Jörg Neugebauer

2002874 pp.
Gallium nitride electronicsRüdiger Quay
⏱ 7h 49m

Gallium nitride electronics

Rüdiger Quay

2008469 pp.
Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-through put rate transceiverRichard A Kot

Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-through put rate transceiver

Richard A Kot

1984No page data
Properties of lattice-matched and strained indium gallium arsenidePallab Bhattacharya
⏱ 5h 17m

Properties of lattice-matched and strained indium gallium arsenide

Pallab Bhattacharya

1993317 pp.
III-nitride devices and nanoengineeringZhe Chuan Feng
⏱ 7h 42m

III-nitride devices and nanoengineering

Zhe Chuan Feng

2008462 pp.
GaN and related alloys--2003Hock Min Ng
⏱ 13h 54m

GaN and related alloys--2003

Hock Min Ng

2004834 pp.
GaN, AIN, InN and related materialsSymposium on GaN, AIN, InN and Related Materials (2005 Boston, Mass.)
⏱ 14h 18m

GaN, AIN, InN and related materials

Symposium on GaN, AIN, InN and Related Materials (2005 Boston, Mass.)

2006858 pp.
Technology of gallium nitride crystal growthDirk Ehrentraut
⏱ 5h 48m

Technology of gallium nitride crystal growth

Dirk Ehrentraut

2010348 pp.
Properties of aluminum gallium arsenideSadao Adachi
⏱ 5h 25m

Properties of aluminum gallium arsenide

Sadao Adachi

2006325 pp.
A thermodynamic study of the zinc-indium system by galvanic cell measurementsSidney Morton Selis
⏱ 2h 30m

A thermodynamic study of the zinc-indium system by galvanic cell measurements

Sidney Morton Selis

1952150 pp.
Gan and Related Alloys - 2003Hock Min Ng
⏱ 14h 22m

Gan and Related Alloys - 2003

Hock Min Ng

2014862 pp.
GaN, AIN, InN and Related MaterialsMartin Kuball
⏱ 14h 50m

GaN, AIN, InN and Related Materials

Martin Kuball

2014890 pp.
Page 1 of 2Next →